Vapour growth and epitaxy 1994MULLIN, J. B.Journal of crystal growth. 1995, Vol 146, Num 1-4, issn 0022-0248, 688 p.Conference Proceedings

Bulk vapour growth of CdTeGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 65-68, issn 0022-0248Conference Paper

Doping of wide gap II-VI compoundsFASCHINGER, W.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 80-86, issn 0022-0248Conference Paper

Island formation of InAs grown on GaAsNABETANI, Y; YAMAMOTO, N; TOKUDA, T et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 363-367, issn 0022-0248Conference Paper

Chemical beam epitaxy of iron disilicide on siliconNATOLI, J. Y; BERBEZIER, I; RONDA, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 444-448, issn 0022-0248Conference Paper

Fluctuations and instabilities of steps in the growth and sublimation of crystalsUWAHA, M; SAITO, Y; SATO, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 164-170, issn 0022-0248Conference Paper

Growth of C₆₀ crystals from the vapor phaseSCHÖNHERR, E; MATSUMOTO, K; WOJNOWSKI, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 227-232, issn 0022-0248Conference Paper

Effect of temperature field on growth stabilityGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 69-74, issn 0022-0248Conference Paper

Mass flux of ZnSe by physical vapor transportYI-GAO SHA; CHING-HUA SU; PALOSZ, W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 42-48, issn 0022-0248Conference Paper

Ordering in GaInP grown at low temperaturesSU, L. C; HO, I. H; STRINGFELLOW, G. B et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 558-563, issn 0022-0248Conference Paper

Growth of CuInTe₂ polycrystalline thin filmsNADENAU, V; WALTER, T; SCHOCK, H. W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 251-255, issn 0022-0248Conference Paper

Liquid phase electroepitaxy of III-V semiconductorsGOLUBEV, L. V; EGOROV, A. V; NOVIKOV, S. V et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 277-282, issn 0022-0248Conference Paper

Pseudomorphic vanadyl-phthalocyanine and its stable orientation on KBrHASHIMOTO, S; OGAWA, T; ASAKA, N et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 649-654, issn 0022-0248Conference Paper

Doping of GaSb single crystals with various elementsSESTAKOVA, V; STEPANEK, B.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 87-91, issn 0022-0248Conference Paper

Elementary growth process of molecular beam epitaxyNISHINAGA, T.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 326-333, issn 0022-0248Conference Paper

Stoichiometry of CdS crystals and their optical and lasing propertiesKAZLAUSKAS, A; GAVRYUSHIN, V; RACIUKAITIS, G et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 59-64, issn 0022-0248Conference Paper

The optimal temperature profile in crystal growth from the vapourGRASZA, K; JANIK, E; MYCIELSKI, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 75-79, issn 0022-0248Conference Paper

Characterization of <111> cadmium telluride electrodeposited on cadmium sulphideKAMPMANN, A; COWACHE, P; MOKILI, B et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 256-261, issn 0022-0248Conference Paper

Characterization of vapor phase growth using X-ray techniquesKISKER, D. W; STEPHENSON, G. B; FUOSS, P. H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 104-111, issn 0022-0248Conference Paper

Defect control during growth of highly mismatched (100) InAs/GaAs-heterostructuresTRAMPERT, A; TOURNIE, E; PLOOG, K. H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 368-373, issn 0022-0248Conference Paper

Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor depositionSOGA, T; JIMBO, T; UMENO, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 554-557, issn 0022-0248Conference Paper

Molecular orientation of vapor-deposited films of long-chain molecules observed with atomic force microscopyTAKIGUCHI, H; IZAWA, M; YASE, K et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 645-648, issn 0022-0248Conference Paper

Studies of the compensation mechanism in CdTe grown from the vapour phaseFIEDERLE, M; EBLING, D; EICHE, C et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 142-147, issn 0022-0248Conference Paper

Uniformity in (Hg, Mn)Te films grown by metalorganic vapour phase epitaxyHALLAM, T. D; OKTIK, S; FUNAKI, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 604-609, issn 0022-0248Conference Paper

Characterization of cadmium telluride crystals grown by different techniques from the vapour phaseLAASCH, M; SCHWARZ, R; JOERGER, W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 125-129, issn 0022-0248Conference Paper